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  English.dicp.cas.cn    Posted:2013-11-07
Graphene interfaces

Time: Nov. 12, 2013(Tuesday ), 9:30a.m. 

LocationConference Room of Basic Energy Science Building 

Dr. Matthias Batzill 

Dept. of Physics, University of South Florida,  USA  


 In this presentation I discuss chemical vapor deposition (CVD) growth and interface properties of graphene studied by electron spectroscopy (XPS, AES, UPS) and microscopy (LEEM, STM) [1]. The first part of my talk focuses on (monolayer) graphene growth on nickel surfaces in vacuum by chemical vapor deposition. We discuss the growth modes as a function of growth temperatures and competing carbon containing surface phases [2] and illustrate linear 1D-defects in graphene [3]. The second part discusses interfaces between metal/graphene/oxide sandwich structures. We demonstrate that yttria (Y2O3) forms a complete wetting layer on metal-supported graphene [4] and can form a crystalline well-ordered film on graphene [5]. Using x-ray photoemission spectroscopy (XPS) we demonstrate variation in charge doping of graphene depending on the combination of the metal and the oxide between the graphene-layer is sandwiched [6]. Finally, we show that the capability of XPS to measure charge doping in graphene may be useful tool to determine interface band alignment between graphene and arbitrary (semiconducting) substrates [7].  

[1] “The surface science of graphene: Metal interfaces, CVD synthesis, nanoribbons, chemical modifications, and defects” M.Batzill, Surf. Sci. Rep. 67, 83-115 (2012).  

[2] “Graphene Growth on Ni(111) by Transformation of a Surface Carbide” J. Lahiri, T. Miller, L. Adamska, I.I. Oleynik, M. Batzill Nano Lett. 11, 518-522 (2011). “Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition” R. Addou, A. Dahal, P. Sutter, M. Batzill Appl. Phys. Lett.  100, 021601 (2012). “Graphene growth and stability at nickel surfaces” J. Lahiri, T.S. Miller, A.J. Ross, L. Adamska, I.I. Oleynik, M. Batzill  New J. Phys.  13, 025001(2011). “Graphene monolayer rotation on Ni(111) facilitates bilayer graphene growth” A. Dahal, R. Addou, P. Sutter, M. Batzill Appl. Phys. Lett. 100, 241602 (2012). 

[3] “One dimensional metallic wires in graphene” J. Lahiri, Y. Lin, P. Bozkurt, I. Oleynik, M. Batzill Nature Nanotech. 5, 326 (2010). 

[4] “Growth of a two dimensional dielectric monolayer on quasi-freestanding graphene” R. Addou, A. Dahal, M. Batzill, Nature Nanotech. 8, 41-45 (2013). 

[5] “Preparation and characterization of Ni(111)/graphene/Y2O3(111) heterostructures” A. Dahal, H. Coy-Diaz, R. Addo, M.Batzill J. Appl. Phys. 113, 194305 (2013). 

[6]”Charge doping of graphene in a metal/graphene/dielectric sandwich structures evaluated by C-1s core level photoemission spectroscopy“ A. Dahal, R. Addou, H. Coy-Diaz, J. Lallo, M. Batzill APL Mater. 1, 042107 (2013) 

[7] “Interface properties of CVD grown graphene transferred on to MoS2(0001)” H. Coy-Diaz, R. Addou, M. Batzill Nanoscale submitted, “The interface between graphene and SrTiO3(001) investigated by scanning tunneling microscopy and photoemission” H. Coy-Diaz, R. Addou, M. Batzill J. Phys. Chem. C 117, 21006-21013 (2013). 


Matthias Batzill is currently an Associate Professor of Physics at the University of South Florida in Tampa, where he has been a faculty since 2006. He has been educated in Germany {Diploma (MSc), University of Göttingen, 1996}, England {PhD, University of Newcastle, 2000}, and USA {post-docs, University of Southern California and Tulane University}. His current research interests are mainly in oxide surfaces, photocatalysis, materials science of graphene and other 2D materials. His over 80 publications have received close to 600 citations last year alone and he has currently an h-index of 25 (ISI citation index). He received a NSF-CAREER award (2009), USF Outstanding Research Achievement Award (2010), and was awarded the Hans Fischer Junior Fellowship of the TU Munich, Germany (2013). He also gave invited talks at the ACS, APS, and MRS meetings as well as at many specialized conferences, universities, and national labs.   

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